Semiconductor Device and Method

ABSTRACT

In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. application Ser. No.16/716,248, filed on Dec. 16, 2019, and entitled “Semiconductor Deviceand Method,” which application is a continuation of U.S. applicationSer. No. 16/421,759, filed on May 24, 2019, and entitled “SemiconductorDevice and Method,” now U.S. Pat. No. 10,510,756 issued on Dec. 17,2019, which application is a continuation of U.S. application Ser. No.15/998,780, filed on Aug. 15, 2018, and entitled “Semiconductor Deviceand Method,” now U.S. Pat. No. 10,304,835 issued on May 28, 2019, whichapplications are incorporated herein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise thatshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates an example of a FinFET in a three-dimensional view,in accordance with some embodiments.

FIGS. 2, 3, 4, 5, 6, 7, 8, 9A, 9B, 9C, 10, 11, 12, 13, 14, 15, 16, 17,18, and 19 are cross-sectional views of intermediate stages in themanufacturing of FinFETs, in accordance with some embodiments.

FIG. 20 is a graph illustrating doping concentrations of a gatedielectric layer, in accordance with some embodiments.

FIGS. 21, 22, and 23 are cross-sectional views of intermediate stages inthe manufacturing of FinFETs, in accordance with some embodiments.

FIG. 24 is a graph illustrating doping concentrations of a gatedielectric layer, in accordance with some embodiments.

FIGS. 25, 26, and 27 are cross-sectional views of intermediate stages inthe manufacturing of FinFETs, in accordance with some embodiments.

FIGS. 28, 29, and 30 are cross-sectional views of intermediate stages inthe manufacturing of FinFETs, in accordance with some other embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In accordance with some embodiments, a doping layer is formed on a gatedielectric layer, and dipole-inducing elements (e.g., La, Al, Sc, Ru,Zr, Er, Mg, Sr, etc.) from the doping layer are driven through the gatedielectric layer by an annealing process. The doping layer is thenremoved. A sacrificial layer is formed on the gate dielectric layer. Thesacrificial layer reacts (e.g., bonds to or interacts) with residualdipole-inducing elements that remain on the gate dielectric layer afterremoval of the doping layer. The sacrificial layer is then removed andreplaced with a capping layer. By forming dipole-inducing elements atthe interface of the gate dielectric layer and underlying layers, thethreshold voltage of subsequently formed devices may be controlled.Further, by removing dipole-inducing elements from the interface of thegate dielectric layer and overlying layers, the breakdown voltage of thegate dielectric layer may be improved.

FIG. 1 illustrates an example of a FinFET in a three-dimensional view,in accordance with some embodiments. The FinFET comprises a fin 58 on asubstrate 50. Isolation regions 56 are formed on the substrate 50, andthe fin 58 protrudes above and from between neighboring isolationregions 56. A gate dielectric layer 102 is along sidewalls and over atop surface of the fin 58, and a gate electrode 120 is over the gatedielectric layer 102. Source/drain regions 86 are disposed in oppositesides of the fin 58 with respect to the gate dielectric layer 102 andgate electrode 120. FIG. 1 further illustrates reference cross-sectionsthat are used in later figures. Cross-section A-A is across a channel,gate dielectric layer 102, and gate electrode 120 of the FinFET.Cross-section B-B is perpendicular to cross-section A-A and is along alongitudinal axis of the fin 58 and in a direction of, for example, acurrent flow between the source/drain regions 86. Cross-section C-C isparallel to cross-section B-B and extends through a source/drain regionof the FinFET Subsequent figures refer to these reference cross-sectionsfor clarity.

Some embodiments discussed herein are discussed in the context ofFinFETs formed using a gate-last process. In other embodiments, agate-first process may be used. Also, some embodiments contemplateaspects used in planar devices, such as planar FETs.

FIGS. 2-6 are cross-sectional views of intermediate stages in themanufacturing of FinFETs, in accordance with some embodiments. FIGS. 2through 6 are shown along reference cross-section A-A illustrated inFIG. 1, except for multiple fins/FinFETs.

In FIG. 2, fins 52 are formed in a substrate 50. The substrate 50 may bea semiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. Thesubstrate 50 may be a wafer, such as a silicon wafer. Generally, an SOIsubstrate is a layer of a semiconductor material formed on an insulatorlayer. The insulator layer may be, for example, a buried oxide (BOX)layer, a silicon oxide layer, or the like. The insulator layer isprovided on a substrate, typically a silicon or glass substrate. Othersubstrates, such as a multi-layered or gradient substrate may also beused. In some embodiments, the semiconductor material of the substrate50 may include silicon; germanium; a compound semiconductor includingsilicon carbide, gallium arsenic, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductorincluding SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; orcombinations thereof.

The substrate 50 has a region 50B and a region 50C. The region 50B canbe for forming n-type devices, such as NMOS transistors, e.g., n-typeFinFETs. The region 50C can be for forming p-type devices, such as PMOStransistors, e.g., p-type FinFETs. The region 50B may be physicallyseparated from the region 50C (as illustrated by a divider), and anynumber of device features (e.g., other active devices, doped regions,isolation structures, etc.) may be disposed between the region 50B andthe region 50C. In some embodiments, both the region 50B and the region50C are used to form the same type of devices, such as both regionsbeing for n-type devices or p-type devices.

The fins 52 are semiconductor strips. In some embodiments, the fins 52may be formed in the substrate 50 by etching trenches in the substrate50. The etching may be any acceptable etch process, such as a reactiveion etch (RIE), neutral beam etch (NBE), the like, or a combinationthereof. The etch may be anisotropic.

In FIG. 3, an insulation material 54 is formed over the substrate 50 andbetween neighboring fins 52. The insulation material 54 may be an oxide,such as silicon oxide, a nitride, the like, or a combination thereof,and may be formed by a high density plasma chemical vapor deposition(HDP-CVD), a flowable CVD (FCVD) (e.g., a CVD-based material depositionin a remote plasma system and post curing to make it convert to anothermaterial, such as an oxide), the like, or a combination thereof. Otherinsulation materials formed by any acceptable process may be used. Inthe illustrated embodiment, the insulation material 54 is silicon oxideformed by a FCVD process. An anneal process may be performed once theinsulation material is formed. In an embodiment, the insulation material54 is formed such that excess insulation material 54 covers the fins 52.

In FIG. 4, a planarization process is applied to the insulation material54. In some embodiments, the planarization process includes a chemicalmechanical polish (CMP), an etch back process, combinations thereof, orthe like. The planarization process exposes the fins 52. Top surfaces ofthe fins 52 and the insulation material 54 are level after theplanarization process is complete.

In FIG. 5, the insulation material 54 is recessed to form Shallow TrenchIsolation (STI) regions 56. The insulation material 54 is recessed suchthat fins 58 in the region 50B and in the region 50C protrude frombetween neighboring STI regions 56. Further, the top surfaces of the STIregions 56 may have a flat surface as illustrated, a convex surface, aconcave surface (such as dishing), or a combination thereof. The topsurfaces of the STI regions 56 may be formed flat, convex, and/orconcave by an appropriate etch. The STI regions 56 may be recessed usingan acceptable etching process, such as one that is selective to thematerial of the insulation material 54. For example, a chemical oxideremoval using a CERTAS® etch or an Applied Materials SICONI tool ordilute hydrofluoric (dHF) acid may be used.

A person having ordinary skill in the art will readily understand thatthe process described with respect to FIGS. 2 through 5 is just oneexample of how the fins 58 may be formed. In some embodiments, adielectric layer can be formed over a top surface of the substrate 50;trenches can be etched through the dielectric layer; homoepitaxialstructures can be epitaxially grown in the trenches; and the dielectriclayer can be recessed such that the homoepitaxial structures protrudefrom the dielectric layer to form fins. In some embodiments,heteroepitaxial structures can be used for the fins 52. For example, thefins 52 in FIG. 4 can be recessed, and a material different from thefins 52 may be epitaxially grown in their place. In an even furtherembodiment, a dielectric layer can be formed over a top surface of thesubstrate 50; trenches can be etched through the dielectric layer;heteroepitaxial structures can be epitaxially grown in the trenchesusing a material different from the substrate 50; and the dielectriclayer can be recessed such that the heteroepitaxial structures protrudefrom the dielectric layer to form the fins 58. In some embodiments wherehomoepitaxial or heteroepitaxial structures are epitaxially grown, thegrown materials may be in situ doped during growth, which may obviateprior and subsequent implantations although in situ and implantationdoping may be used together. Still further, it may be advantageous toepitaxially grow a material in an NMOS region different from thematerial in a PMOS region. In various embodiments, the fins 58 may beformed from silicon germanium (Si_(x)Ge_(1-x), where x can be in therange of 0 to 1), silicon carbide, pure or substantially pure germanium,a III-V compound semiconductor, a II-VI compound semiconductor, or thelike. For example, the available materials for forming III-V compoundsemiconductor include, but are not limited to, InAs, AlAs, GaAs, InP,GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, and the like.

Further, appropriate doped regions (not shown, sometimes referred to aswell regions) may be formed in the fins 58, the fins 52, and/or thesubstrate 50. In some embodiments, a P-type doped region may be formedin the region 50B, and an N-type doped region may be formed in theregion 50C. In some embodiments, only P-type or only N-type dopedregions are formed in both the region 50B and the region 50C.

In the embodiments with different types of doped regions, the differentimplant steps for the region 50B and the region 50C may be achievedusing a photoresist or other masks (not shown). For example, aphotoresist may be formed over the fins 58 and the STI regions 56 in theregion 50B. The photoresist is patterned to expose the region 50C of thesubstrate 50, such as a PMOS region. The photoresist can be formed byusing a spin-on technique and can be patterned using acceptablephotolithography techniques. Once the photoresist is patterned, ann-type impurity implant is performed in the region 50C, and thephotoresist may act as a mask to substantially prevent n-type impuritiesfrom being implanted into the region 50B, such as an NMOS region. Then-type impurities may be phosphorus, arsenic, or the like implanted inthe region to a concentration of equal to or less than 10¹⁸ cm⁻³, suchas from about 10¹⁷ cm⁻³ to about 10¹⁸ cm⁻³. After the implant, thephotoresist is removed, such as by an acceptable ashing process.Following the implanting of the region 50C, a photoresist is formed overthe fins 58 and the STI regions 56 in the region 50C. The photoresist ispatterned to expose the region 50B of the substrate 50, such as the NMOSregion. The photoresist can be formed by using a spin-on technique andcan be patterned using acceptable photolithography techniques. Once thephotoresist is patterned, a p-type impurity implant may be performed inthe region 50B, and the photoresist may act as a mask to substantiallyprevent p-type impurities from being implanted into the region 50C, suchas the PMOS region. The p-type impurities may be boron, BF2, or the likeimplanted in the region to a concentration of equal to or less than 10¹⁸cm⁻³, such as from about 10¹⁷ cm⁻³ to about 10¹⁸ cm⁻³. After theimplant, the photoresist may be removed, such as by an acceptable ashingprocess. After the implants of the region 50B and the region 50C, ananneal may be performed to activate the p-type and/or n-type impuritiesthat were implanted. In some embodiments, the grown materials ofepitaxial fins may be in situ doped during growth, which may obviate theimplantations, although in situ and implantation doping may be usedtogether.

In FIG. 6, a dummy dielectric layer 60 is formed over the fins 58. Thedummy dielectric layer 60 may be, for example, silicon oxide, siliconnitride, a combination thereof, or the like, and may be deposited orthermally grown according to acceptable techniques. A dummy gate layer62 is formed over the dummy dielectric layer 60, and a mask layer 64 isformed over the dummy gate layer 62. The dummy gate layer 62 may bedeposited over the dummy dielectric layer 60 and then planarized, suchas by a CMP. The dummy gate layer 62 may be a conductive material andmay be selected from a group including polycrystalline-silicon(polysilicon), poly-crystalline silicon-germanium (poly-SiGe), metallicnitrides, metallic silicides, metallic oxides, and metals. In oneembodiment, amorphous silicon is deposited and recrystallized to createpolysilicon. The dummy gate layer 62 may be deposited by physical vapordeposition (PVD), CVD, sputter deposition, or other techniques known andused in the art for depositing conductive materials. The dummy gatelayer 62 may be made of other materials that have a high etchingselectivity from the etching of isolation regions. The mask layer 64 maybe deposited over the dummy gate layer 62. The mask layer 64 mayinclude, for example, SiN, SiON, or the like. In this example, a singledummy gate layer 62 and a single mask layer 64 are formed across theregion 50B and the region 50C. In some embodiments, separate dummy gatelayers may be formed in the region 50B and the region 50C, and separatemask layers may be formed in the region 50B and the region 50C.

FIGS. 7-19, 21-23, and 25-27 are cross-sectional views of intermediatestages in the manufacturing of FinFETs, in accordance with someembodiments. FIGS. 7-9A, 10-19, 21-23, and 25-27 are shown alongreference cross-section B-B illustrated in FIG. 1, except for multiplefins/FinFETs. FIGS. 9B-9C are shown along reference cross-section C-Cillustrated in FIG. 1, except for multiple fins/FinFETs.

FIGS. 7-18, 21-22, and 25-27 illustrate a region 58B and a region 58C ofone or more of the fins 58. The regions 58B and 58C may be in the samefin 58 or different fins 58. Devices in the different regions 58B and58C are formed to have different threshold voltages.

In FIG. 7, the mask layer 64 is patterned using acceptablephotolithography and etching techniques to form masks 74. The pattern ofthe masks 74 then may be transferred to the dummy gate layer 62 and thedummy dielectric layer 60 by an acceptable etching technique to,respectively, form dummy gates 72 and dummy gate dielectric layers 70.The dummy gates 72 and dummy gate dielectric layers 70 cover respectivechannel regions of the fins 58. The pattern of the masks 74 may be usedto physically separate each of the dummy gates 72 from adjacent dummygates. The dummy gates 72 may also have a lengthwise directionsubstantially perpendicular to the lengthwise direction of respectiveepitaxial fins.

In FIG. 8, gate seal spacers 80 can be formed on exposed surfaces of thedummy gates 72 and/or the fins 58. A thermal oxidation or a depositionfollowed by an anisotropic etch may form the gate seal spacers 80. Insome embodiments, the gate seal spacers 80 may be formed of a nitride,such as silicon nitride, silicon oxynitride, silicon carbide, siliconcarbonitride, the like, or a combination thereof. The gate seal spacers80 seal the sidewalls of subsequently formed gate stacks, and may act asadditional gate spacing layers.

Further, implants for lightly doped source/drain (LDD) regions 82 may beperformed. In the embodiments with different device types, similar tothe implants discussed above in FIG. 5, a mask, such as a photoresist,may be formed over the first region 50B, while exposing the secondregion 50C, and appropriate type (e.g., n-type or p-type) impurities maybe implanted into the exposed fins 58 in the second region 50C. The maskmay then be removed. Subsequently, a mask, such as a photoresist, may beformed over the second region 50C while exposing the first region 50B,and appropriate type impurities may be implanted into the exposed fins58 in the first region 50B. The mask may then be removed. The n-typeimpurities may be the any of the n-type impurities previously discussed,and the p-type impurities may be the any of the p-type impuritiespreviously discussed. The lightly doped source/drain regions may have aconcentration of impurities of from about 10¹⁵ cm⁻³ to about 10¹⁶ cm⁻³.An anneal may be used to activate the implanted impurities.

Further, gate spacers 84 are formed on the gate seal spacers 80 alongsidewalls of the dummy gates 72 and over the LDD regions 82. The gatespacers 84 may be formed by conformally depositing a material andsubsequently anisotropically etching the material. The material of thegate spacers 84 may be silicon nitride, SiCN, a combination thereof, orthe like. The etch may be selective to the material of the gate spacers84, such that the LDD regions 82 are not etched during the formation ofthe gate spacers 84.

In FIGS. 9A, 9B, and 9C, epitaxial source/drain regions 86 are formed inthe fins 58. The epitaxial source/drain regions 86 are formed in thefins 58 such that each dummy gate 72 is disposed between respectiveneighboring pairs of the epitaxial source/drain regions 86. In someembodiments, the epitaxial source/drain regions 86 may extend throughthe LDD regions 82. In some embodiments, the gate seal spacers 80 andgate spacers 84 are used to separate the epitaxial source/drain regions86 from the dummy gates 72 by an appropriate lateral distance so thatthe epitaxial source/drain regions 86 do not short out subsequentlyformed gates of the resulting FinFETs.

The epitaxial source/drain regions 86 in the region 50B, e.g., the NMOSregion, may be formed by masking the region 50C, e.g., the PMOS region,and etching source/drain regions of the fins 58 in the region 50B toform recesses in the fins 58. Then, the epitaxial source/drain regions86 in the region 50B are epitaxially grown in the recesses. Theepitaxial source/drain regions 86 may include any acceptable material,such as appropriate for n-type FinFETs. For example, if the fins 58 aresilicon, the epitaxial source/drain regions 86 in the region 50B mayinclude silicon, SiC, SiCP, SiP, or the like. The epitaxial source/drainregions 86 in the region 50B may have surfaces raised from respectivesurfaces of the fins 58 and may have facets.

The epitaxial source/drain regions 86 in the region 50C, e.g., the PMOSregion, may be formed by masking the region 50B, e.g., the NMOS region,and etching source/drain regions of the fins 58 in the region 50C toform recesses in the fins 58. Then, the epitaxial source/drain regions86 in the region 50C are epitaxially grown in the recesses. Theepitaxial source/drain regions 86 may include any acceptable material,such as appropriate for p-type FinFETs. For example, if the fins 58 aresilicon, the epitaxial source/drain regions 86 in the region 50C maycomprise SiGe, SiGeB, Ge, GeSn, or the like. The epitaxial source/drainregions 86 in the region 50C may also have surfaces raised fromrespective surfaces of the fins 58 and may have facets.

The epitaxial source/drain regions 86 are in situ doped during growth toform source/drain regions. The epitaxial source/drain regions 86 havethe same doping type as the respective LDD regions 82, and may be dopedwith the same dopants or different dopants. The epitaxial source/drainregions 86 may have an impurity concentration of between about 10¹⁹ cm⁻³and about 10²¹ cm⁻³. The n-type and/or p-type impurities forsource/drain regions may be any of the impurities previously discussed.Because the epitaxial source/drain regions 86 are in situ doped duringgrowth, they are not doped by implantation. However, the doping profileand concentration of the LDD regions 82 produced according to someembodiments may be similar to that which would be produced if theepitaxial source/drain regions 86 were doped by implantation. Improvingthe doping profile and concentration of the LDD regions 82 may improvethe performance and reliability of the resulting semiconductor devices.

As a result of the epitaxy processes used to form the epitaxialsource/drain regions 86 in the region 50B and the region 50C, uppersurfaces of the epitaxial source/drain regions have facets which expandlaterally outward beyond a sidewalls of the fins 58. In someembodiments, these facets cause adjacent epitaxial source/drain regions86 of a same finFET to merge, as illustrated by the embodiment of FIG.9B. In other embodiments, adjacent epitaxial source/drain regions 86remain separated after the epitaxy process is completed, as illustratedby the embodiment of FIG. 9C.

In FIG. 10, an ILD 90 is deposited over the fins 58. The ILD 90 may beformed of a dielectric material or a semiconductor material, and may bedeposited by any suitable method, such as CVD, plasma-enhanced CVD(PECVD), or FCVD. Dielectric materials may include Phospho-SilicateGlass (PSG), Boro-Silicate Glass (BSG), Boron-Doped Phospho-SilicateGlass (BPSG), undoped Silicate Glass (USG), or the like. Semiconductormaterials may include amorphous silicon, silicon germanium(Si_(x)Ge_(1-x), where x can be between approximately 0 and 1), pureGermanium, or the like. Other insulation or semiconductor materialsformed by any acceptable process may be used. In some embodiments, acontact etch stop layer (CESL), not illustrated, is disposed between theILD 90 and the epitaxial source/drain regions 86, the gate spacers 84,the gate seal spacers 80, and the masks 74.

In FIG. 11, a planarization process, such as a CMP, may be performed tolevel the top surface of the ILD 90 with the top surfaces of the dummygates 72. The planarization process may also remove the masks 74 on thedummy gates 72, and portions of the gate seal spacers 80 and the gatespacers 84 along sidewalls of the masks 74. After the planarizationprocess, top surfaces of the dummy gates 72, the gate seal spacers 80,the gate spacers 84, and the ILD 90 are level. Accordingly, the topsurfaces of the dummy gates 72 are exposed through the ILD 90.

In FIG. 12, the dummy gates 72 and portions of the dummy gate dielectriclayers 70 directly underlying the exposed dummy gates 72 are removed inan etching step(s), so that recesses 92 are formed. In some embodiments,the dummy gates 72 are removed by an anisotropic dry etch process. Forexample, the etching process may include a dry etch process usingreaction gas(es) that selectively etch the dummy gates 72 withoutetching the ILD 90, the gate spacers 84, or the gate seal spacers 80.Each recess 92 exposes a channel region of a respective fin 58. Eachchannel region is disposed between neighboring pairs of the epitaxialsource/drain regions 86. During the removal, the dummy gate dielectriclayers 70 may be used as an etch stop layer when the dummy gates 72 areetched. The dummy gate dielectric layers 70 may then be removed afterthe removal of the dummy gates 72.

In FIG. 13, an interface layer 100 is formed in the recesses 92. Theinterface layer 100 is conformally formed over the fin 58, and thus theinterface layer 100 lines sidewalls and the bottom surface of therecesses 92. The interface layer 100 may also cover the upper surface ofthe ILD 90. In accordance with some embodiments, the interface layer 100is an oxide of the material of the fin 58, and may be formed by, e.g.,oxidizing the fins 58 in the recesses 92. The interface layer 100 mayalso be formed by a deposition process, such as a chemical vapordeposition (CVD) process, a physical vapor deposition (PVD) process, anatomic layer deposition (ALD) process, or the like.

Further, a gate dielectric layer 102 is formed over the interface layer100. The gate dielectric layer 102 may be deposited conformally in therecesses 92, such as on the top surfaces and the sidewalls of the fins58 and on sidewalls of the interface layer 100 in the recesses 92. Thegate dielectric layer 102 may also be formed along top surfaces of theILD 90. In accordance with some embodiments, the gate dielectric layer102 is a high-k dielectric material having a k value greater than about7.0, and may include a metal oxide or a silicate of Hf, Al, Zr, La, Mg,Ba, Ti, Pb, and combinations thereof. The formation methods of the gatedielectric layer 102 may include Molecular-Beam Deposition (MBD), ALD,PECVD, and the like.

Further, a doping layer 104 is formed over the gate dielectric layer102. The doping layer 104 may be formed from an oxide, nitride, orcarbide of a dipole-inducing element such as La, Al, Sc, Ru, Zr, Er, Mg,Sr, and combinations thereof. The doping layer 104 may be formed by PVD,CVD, ALD, or other suitable deposition methods. In a particularembodiment, the doping layer 104 is formed from an oxide of La, e.g.,LaO_(x).

In FIG. 14, a mask layer 106 is formed over the doping layer 104. Themask layer 106 may be formed of a hard masking material, and may includea metal and/or a dielectric. In embodiments where the mask layer 106includes a metal, it may be formed of titanium nitride, titanium,tantalum nitride, tantalum, aluminum oxide, or the like. In embodimentswhere the mask layer 106 includes a dielectric, it may be formed of anoxide, a nitride, or the like. The mask layer 106 may be formed by PVD,Radio Frequency PVD (RFPVD), Atomic Layer Deposition (ALD), or the like.

Further, a photoresist 108 is formed over the mask layer 106. Thephotoresist 108 may be a single-layer photoresist, a tri-layerphotoresist, or the like. In an embodiment, the photoresist 108 is atri-layer photoresist that includes a bottom layer, a middle layer, andan upper layer (not shown). The upper layer may be formed of aphotosensitive material, such as a photoresist, which may compriseorganic materials. The bottom layer may be a bottom anti-reflectivecoating (BARC). The middle layer may be formed of or include aninorganic material, which may be a nitride (such as silicon nitride), anoxynitride (such as silicon oxynitride), an oxide (such as siliconoxide), or the like. The middle layer has a high etching selectivityrelative to the upper layer and the bottom layer. As a result, the upperlayer is used as an etching mask for the patterning of the middle layer,and the middle layer is used as an etching mask for the patterning ofthe bottom layer.

After formation, the photoresist 108 is patterned using any suitablephotolithography technique after formation to form openings 110 exposingthe recesses 92 in the region 58C. For example, an etching processincluding etchants such as CF₄, CH₃F, H₂, N₂, Ar, the like, or acombination thereof may be used to remove portions of the photoresist108 without substantially damaging the mask layer 106. In the embodimentshown, the openings 110 are formed in the region 58C of the fins 58.Gates of the devices formed in the covered region 58B will have amodulated work function. As such, resulting devices in the regions 58Band 58C will have different threshold voltages.

In FIG. 15, a plurality of etching processes are performed to transferthe pattern of the photoresist 108 to the doping layer 104, therebyextending the openings 110 through the doping layer 104. As such,remaining portions of the doping layer 104 are in the regions 58B wherethe metal gate work functions will be modulated. In an embodiment, oneor more wet etching processes are performed using etchants such as anammonia peroxide mixture (APM), sulfuric acid peroxide mixture (SPM),hydrochloric acid peroxide mixture (HPM), H₂O₂, O₃, or the like. In anembodiment, a first etching process is performed using a HPM to transferthe pattern of the photoresist 108 to the mask layer 106, and a secondetching process is performed using an APM to transfer the pattern of themask layer 106 to the doping layer 104.

In FIG. 16, remaining portions of the photoresist 108 and mask layer 106are removed to expose the recesses 92 in the region 58B. The remainingportions of the photoresist 108 may be removed by an acceptable ashingprocess, and the remaining portions of the mask layer 106 may be removedby repeating the first etching process, e.g., by etching the mask layer106 with an APM.

In FIG. 17, an annealing process is performed to drive thedipole-inducing element of the doping layer 104 into and throughportions of the gate dielectric layer 102 in region 58B. The annealingprocess may be performed at a temperature of from about 550° C. to about1050° C. The annealing process may be performed for a time period ofless than about 5 minutes, and the annealing time may depend on theannealing temperature. It should be appreciated that other annealingprocesses may be performed at other temperatures and for other timeperiods. After the annealing process, excess portions of the dopinglayer 104 are removed. The removal may be accomplished by repeating thesecond etching process, e.g., by etching the doping layer 104 with aHPM.

During the annealing process, some of the dipole-inducing element of thedoping layer 104 is driven into the gate dielectric layer 102. Portionsof the gate dielectric layer 102 covered by the doping layer 104 (e.g.,in the in region 58B) are thus doped with the dipole-inducing element.As such, after the annealing process, first portions 102A of the gatedielectric layer 102 in the region 58B have a higher concentration ofthe dipole-inducing element than second portions 102B of the gatedielectric layer 102 in the region 58C.

Further, during the annealing process, some of the dipole-inducingelement of the doping layer 104 is driven through the gate dielectriclayer 102 such that the dipole-inducing element is formed at theinterfaces of the gate dielectric layer 102 and interface layer 100 inthe region 58B. The dipole-inducing element creates dipole interfacesbetween the interface layer 100 and gate dielectric layer 102, which maymodulate the effective work function of subsequently formed metal gates.

In FIG. 18, a sacrificial layer 112 is formed on the gate dielectriclayer 102. The sacrificial layer 112 is a sacrificial layer that will beremoved in subsequent processing. Although an etching process isperformed to remove the doping layer 104, some residual portions of thedoping layer 104 may remain even after the removal etching process. Inparticular, some particles (e.g., residues or atoms) of thedipole-inducing element may remain in top surfaces of the gatedielectric layer 102 in the region 58B. The material of the sacrificiallayer 112 is a material that reacts (e.g., bonds to or interacts) withthe dipole-inducing element. The sacrificial layer 112 may be formedfrom TiAl, TiN, TiAlN, silicon-doped TiN (TiSiN), TaN, or anothermaterial that bonds to or interacts with the dipole-inducing elements,and may be formed by a deposition process such as ALD or CVD. In anembodiment, the sacrificial layer 112 is formed to a thickness of fromabout 10 Å to about 30 Å.

FIG. 19 is a detailed view of the region 200 shown in FIG. 18. As can beseen, the dipole-inducing element 114 has been driven through the gatedielectric layer 102 and is at the interface of the gate dielectriclayer 102 and interface layer 100 in the region 58B. Further, portionsof the sacrificial layer 112 in contact with the gate dielectric layer102 have bonded or interacted with residual particles of thedipole-inducing element 114 at the top surface of the gate dielectriclayer 102.

FIG. 20 is a graph illustrating the concentration of the dipole-inducingelement at different distances from the channel regions of the fins 58.As shown, the concentration increases (e.g., has a positive gradient)through the interface layer 100 to a first concentration C₁ at a firstdistance D₁. The concentration decreases (e.g., has a negative gradient)through a portion of the gate dielectric layer 102 to a secondconcentration C₂ at a second distance D₂, and then begins increasingagain through the remaining portions of the gate dielectric layer 102 toa third concentration C₃ at a third distance D₃. Finally, theconcentration decreases through the sacrificial layer 112 to a fourthdistance D₄

In FIG. 21, the sacrificial layer 112 is removed. The sacrificial layer112 may be removed with an acceptable etching process. In an embodiment,the sacrificial layer 112 is removed with a wet etching process using anAPM. The APM may include NH₄OH, H₂O₂, and H₂O, respectively, at ratiosof from about 1:1:3 to about 1:1:100. The amount of H₂O may depend onthe temperature of the wet etch. The wet etch may be performed at atemperature of from about 30° C. to about 80° C., and may be performedfor a time period of from about 10 seconds to about 500 seconds. Itshould be appreciated that other etch process parameters (e.g.,etchants, ratios, temperatures, and/or time periods) may be used. Someof the residual particles of the dipole-inducing element 114 are removedwith the sacrificial layer 112. In particular, residual particles at theinterface of the sacrificial layer 112 and gate dielectric layer 102 areremoved. As such, after removal of the sacrificial layer 112, theresidue of the dipole-inducing element 114 at the top surface of thegate dielectric layer 102 may be eliminated or at least reduced. Thereduction occurs in both regions 58B and 58C.

In FIG. 22, a capping layer 116 is formed on the gate dielectric layer102. The capping layer 116 may be formed from a similar material as thesacrificial layer 112, and may be formed using a similar depositionprocess. In an embodiment, the capping layer 116 is formed to athickness of from about 10 Å to about 20 Å. After deposition, thecapping layer 116 may optionally be annealed. In embodiments where thecapping layer 116 is annealed, the annealing process is performedin-situ with the deposition process, e.g., is performed in a samechamber without breaking a vacuum between the deposition and annealingprocesses. The annealing processes may be performed at a temperature offrom about 550° C. to about 1050° C. The annealing process may beperformed for a time period of less than about 5 minutes, and theannealing time may depend on the annealing temperature.

FIG. 23 is a detailed view of the region 200 shown in FIG. 22. As can beseen, the residual particles of the dipole-inducing element 114 at thetop surface of the gate dielectric layer 102 have been removed, and theremaining dipole-inducing element 114 particles are at the interface ofthe gate dielectric layer 102 and the interface layer 100. Presence ofthe dipole-inducing element 114 at the interface of the gate dielectriclayer 102 and capping layer 116 may reduce the breakdown voltage of thegate dielectric layer 102. As such, removing the residualdipole-inducing element 114 on top of the gate dielectric layer 102 mayimprove the reliability of the subsequently formed FinFET.

FIG. 24 is a graph illustrating the concentration of the dipole-inducingelement at different distances from the channel regions of the fins 58after the sacrificial layer 112 is removed. As shown, the concentrationincreases (e.g., has a positive gradient) through the interface layer100 to a first concentration C₁ at a first distance D₁. Theconcentration then decreases (e.g., has a negative gradient) through thegate dielectric layer 102 to a fourth concentration C₄ at a seconddistance D₂. The concentration through the capping layer 116 to a thirddistance D₃ is less than the concentration through the gate dielectriclayer 102, and may decrease to zero or a substantially zero level.

In FIG. 25, a gate electrode layer 118 is deposited over the cappinglayer 116 and in the recesses 92. The gate electrode layer 118 may be ametal-containing material such as TiN, TaN, TaC, Co, Ru, Al,combinations thereof, or multi-layers thereof. Although a single gateelectrode layer 118 is shown, any number of work function tuning layersmay be deposited in the recesses 92.

In FIG. 26, a planarization process, such as a CMP, is performed toremove the excess portions of the interface layer 100, gate dielectriclayer 102, capping layer 116, and gate electrode layer 118, which excessportions are over the top surface of the ILD 90. The remaining portionsof the gate electrode layer 118 form gate electrodes 120, which incombination with the other layers, form replacement gates of theresulting FinFETs. The interface layer 100, gate dielectric layer 102,capping layer 116, and gate electrodes 120 may be collectively referredto as the “gates” or “gate stacks” of the resulting FinFETs. The gatestacks may extend along sidewalls of the channel region of the fins 58.

In FIG. 27, an ILD 130 is formed over the gate stacks and ILD 90. In anembodiment, the ILD 130 is a flowable film formed by a flowable CVDmethod. In some embodiments, the ILD 130 is formed of a dielectricmaterial such as PSG, BSG, BPSG, USG, or the like, and may be depositedby any suitable method, such as CVD and PECVD.

Source/drain contacts 132 and gate contacts 134 are formed through theILDs 90 and 130. Openings for the source/drain contacts 132 are formedthrough the ILDs 90 and 130, and openings for the gate contacts 134 areformed through the ILD 130. The openings may be formed using acceptablephotolithography and etching techniques. A liner, such as a diffusionbarrier layer, an adhesion layer, or the like, and a conductive materialare formed in the openings. The liner may include titanium, titaniumnitride, tantalum, tantalum nitride, or the like. The conductivematerial may be copper, a copper alloy, silver, gold, tungsten, cobalt,aluminum, nickel, or the like. A planarization process, such as a CMP,may be performed to remove excess material from a surface of the ILD130. The remaining liner and conductive material form the source/draincontacts 132 and gate contacts 134 in the openings. An anneal processmay be performed to form a silicide at the interface between theepitaxial source/drain regions 86 and the source/drain contacts 132. Thesource/drain contacts 132 are physically and electrically coupled to theepitaxial source/drain regions 86, and the gate contacts 134 arephysically and electrically coupled to the gate electrodes 120. Thesource/drain contacts 132 and gate contacts 134 may be formed indifferent processes, or may be formed in the same process. Althoughshown as being formed in the same cross-sections, it should beappreciated that each of the source/drain contacts 132 and gate contacts134 may be formed in different cross-sections, which may avoid shortingof the contacts.

FIGS. 28 through 30 are cross-sectional views of intermediate stages inthe manufacturing of FinFETs, in accordance with some other embodiments.FIGS. 28 through 30 illustrate an embodiment where the process forforming the doping layer 104 and driving the dipole-inducing elementinto the gate dielectric layer 102 is repeated in different regions.Optionally, the dopants may have different concentrations in thedifferent regions. The process shown in FIGS. 28 through 30 may beperformed after the sacrificial layer 112 is removed (see FIG. 21), andbefore the capping layer 116 is formed (see FIG. 22).

In FIG. 28, a second doping layer 138 is formed over the gate dielectriclayer 102. The second doping layer 138 may be similar to the dopinglayer 104. The thickness of the second doping layer 138 may be differentthan the thickness of the doping layer 104, such that different regionsof the gate dielectric layer 102 are doped with different concentrationsof the dipole-inducing element. The threshold voltages of the formedFinFET devices vary with the doping concentration. A second mask layer140 is formed over the second doping layer 138. The second mask layer140 may be similar to the mask layer 106. A photoresist 142 is formedover the second mask layer 140. The photoresist 142 may be similar tothe photoresist 108, and may be patterned with openings 144 exposing therecesses 92 in the region 58B. A plurality of etching processes are thenperformed to transfer the pattern of the photoresist 142 to the seconddoping layer 138. The etching processes may be similar to the etchingprocesses used for patterning the doping layer 104.

In FIG. 29, an annealing process is performed to drive thedipole-inducing element of the second doping layer 138 into and throughportions of the gate dielectric layer 102 in region 58C. Portions of thegate dielectric layer 102 covered by the second doping layer 138 (e.g.,in the in region 58C) are thus doped with the dipole-inducing element.After the annealing process, the second portions 102B of the gatedielectric layer 102 in the region 58C are thus doped to have adifferent concentration of the dipole-inducing element than the firstportions 102A of the gate dielectric layer 102 in the region 58B.

In FIG. 30, a second sacrificial layer 146 is formed on the gatedielectric layer 102. The second sacrificial layer 146 may be similar tothe sacrificial layer 112. The second sacrificial layer 146 is thenremoved, and may be removed in a similar manner as the sacrificial layer112. After the second sacrificial layer 146 is removed, the cappinglayer 116 may be formed and processing may be continued as describedabove to form FinFET devices.

It should be appreciated that the doping parameters may be varied.Further, it should be appreciated that no dipole doping may be performedin some regions. For example, the gate dielectric layer 102 in a firstregion (e.g., region 58B) may have a first dopant concentration of thedipole-inducing element and may have a first threshold voltage; the gatedielectric layer 102 in a second region (e.g., region 58C) may have asecond dopant concentration of the dipole-inducing element and may havea second threshold voltage; and the gate dielectric layer 102 in a thirdregion (not shown) may be free from the dipole-inducing element and mayhave a third threshold voltage. Further, it should be appreciated thatthe different regions may be in a same fin 58 (as illustrated herein),or in different fins 58 (not shown). In embodiments where the differentregions are in different fins 58, the gate dielectric layer 102 that isdoped may span multiple fins 58.

Embodiments may achieve advantages. Driving dipole-inducing elementsinto the gate dielectric layer 102 forms dipole interfaces between theinterface layer 100 and gate dielectric layer 102, which may modulatethe effective work function of the gate electrodes 120, allowing gateelectrodes 120 with different threshold voltages to be created indifferent regions 58B and 58C. Further, breakdown of the gate dielectriclayer 102 may be reduced when the gate dielectric layer 102 is dopedwith dipole-inducing elements. Sacrificial formation and removal of thesacrificial layer 112 may reduce the amount of residual dipole-inducingelements at the interface of the gate dielectric layer 102 and cappinglayer 116, which may improve the interface between the gate dielectriclayer 102 and capping layer 116, increase the breakdown voltage (andconsequently, the lifetime) of the gate dielectric layer 102, andimprove the reliability of the subsequently formed FinFET. Finally,forming and removing the sacrificial layer 112 may reduce the amount ofresidual dipole-inducing elements at the interface of the gatedielectric layer 102 and capping layer 116 without substantiallydecreasing the amount of residual dipole-inducing elements at theinterface of the interface layer 100 and gate dielectric layer 102.

In an embodiment, a device includes: a first fin extending from asubstrate; a first interface layer on a first channel region of thefirst fin, the first interface layer being doped with a dipole-inducingelement, a first concentration of the dipole-inducing element in thefirst interface layer increasing in a first direction extending awayfrom the first fin; a first gate dielectric layer on the first interfacelayer, the first gate dielectric layer being doped with thedipole-inducing element, a second concentration of the dipole-inducingelement in the first gate dielectric layer decreasing in the firstdirection extending away from the first fin; a first capping layer onthe first gate dielectric layer; and a first gate electrode on the firstcapping layer.

In some embodiments of the device, the first capping layer issubstantially free from the dipole-inducing element. In some embodimentsof the device, the first capping layer is doped with the dipole-inducingelement, a third concentration of the dipole-inducing element in thefirst capping layer being less than the second concentration of thedipole-inducing element in the first gate dielectric layer. In someembodiments, the device further includes: a second fin extending fromthe substrate; a second interface layer on a second channel region ofthe second fin, the second interface layer being doped with thedipole-inducing element, a third concentration of the dipole-inducingelement in the second interface layer increasing in a second directionextending away from the second fin, a rate of increase of the thirdconcentration being different than a rate of increase of the firstconcentration; and a second gate dielectric layer on the secondinterface layer; a second capping layer on the second gate dielectriclayer; and a second gate electrode on the second capping layer. In someembodiments, the device further includes: a second fin extending fromthe substrate; a second interface layer on a second channel region ofthe second fin, the second interface layer being substantially free fromthe dipole-inducing element; and a second gate dielectric layer on thesecond interface layer, the second gate dielectric layer beingsubstantially free from the dipole-inducing element; a second cappinglayer on the second gate dielectric layer; and a second gate electrodeon the second capping layer. In some embodiments of the device, thedipole-inducing element is La.

In an embodiment, a method includes: forming a gate dielectric layer onan interface layer; forming a doping layer on the gate dielectric layer,the doping layer including a dipole-inducing element; annealing thedoping layer to drive the dipole-inducing element through the gatedielectric layer to a first side of the gate dielectric layer adjacentthe interface layer; removing the doping layer; forming a sacrificiallayer on the gate dielectric layer, a material of the sacrificial layerreacting with residual dipole-inducing elements at a second side of thegate dielectric layer adjacent the sacrificial layer; removing thesacrificial layer; forming a capping layer on the gate dielectric layer;and forming a gate electrode layer on the capping layer.

In some embodiments of the method, the doping layer is an oxide,nitride, or carbide of La. In some embodiments of the method, thesacrificial layer and the capping layer are formed from a same material.In some embodiments of the method, forming the sacrificial layerincludes: depositing a first TiSiN layer on the gate dielectric layer.In some embodiments of the method, the removing the sacrificial layerincludes: etching the first TiSiN layer with an ammonia peroxide mixture(APM) including NH₄OH, H₂O₂, and H₂O, respectively, at ratios of fromabout 1:1:3 to about 1:1:100. In some embodiments of the method, thefirst TiSiN layer is etched for a time period of from about 10 secondsto about 500 seconds and at a temperature of from about 30° C. to about80° C. In some embodiments of the method, the first TiSiN layer isdeposited to a thickness of from about 10 Å to about 30 Å. In someembodiments of the method, forming the capping layer includes:depositing a second TiSiN layer on the gate dielectric layer to athickness of from about 10 Å to about 20 Å. In some embodiments, themethod further includes: annealing the second TiSiN layer at atemperature of from about 500° C. to about 1000° C., the second TiSiNlayer deposited and annealed in a same chamber without breaking a vacuumbetween the depositing and the annealing.

In an embodiment, a method includes: forming an interface layer over afirst channel region and a second channel region; forming a gatedielectric layer over the interface layer; forming a dipole interfacebetween portions of the gate dielectric layer and the interface layerover the first channel region; forming a sacrificial layer on the gatedielectric layer, a material of the sacrificial layer reacting withresidual dipole-inducing elements at a side of the gate dielectric layeradjacent the sacrificial layer; removing the sacrificial layer and theresidual dipole-inducing elements; forming a capping layer on the gatedielectric layer; and forming a first gate electrode and a second gateelectrode on the capping layer, the first gate electrode being over thefirst channel region, the second gate electrode being over the secondchannel region.

In some embodiments of the method, the sacrificial layer and theresidual dipole-inducing elements are removed in a same wet etchingprocess. In some embodiments of the method, the first channel region andthe second channel region are in a same semiconductor fin. In someembodiments of the method, the first channel region and the secondchannel region are in different semiconductor fins. In some embodimentsof the method, the first gate electrode and the second gate electrodehave different work functions.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device comprising: a channel region; aninterface layer on the channel region; a gate dielectric layer on theinterface layer, the gate dielectric layer having a first surface facingtowards the interface layer and a second surface opposite the firstsurface, the gate dielectric layer having a first concentration of adipole-inducing element at the first surface, the gate dielectric layerhaving a second concentration of the dipole-inducing element at thesecond surface, the second concentration being less than the firstconcentration; a capping layer on the gate dielectric layer; and a gateelectrode on the capping layer.
 2. The device of claim 1 furthercomprising: a first fin extending from a substrate, the first fincomprising the channel region.
 3. The device of claim 1, wherein thedipole-inducing element is lanthanum.
 4. The device of claim 1, whereinthe capping layer comprises TiSiN.
 5. The device of claim 1, wherein thesecond concentration is zero.
 6. The device of claim 1, wherein thecapping layer has a third surface facing towards the gate dielectriclayer and a fourth surface opposite the third surface, the capping layerhaving a third concentration of the dipole-inducing element at the thirdsurface, the capping layer having a fourth concentration of thedipole-inducing element at the fourth surface, the fourth concentrationbeing less than the third concentration, the third concentration beingless than the first concentration.
 7. A device comprising: a firsttransistor comprising: a first channel region; a first interface layeron the first channel region; a first gate dielectric layer on the firstinterface layer, a first interface of the first gate dielectric layerand the first interface layer having a first concentration of adipole-inducing element; a first capping layer on the first gatedielectric layer, a second interface of the first capping layer and thefirst gate dielectric layer being free from the dipole-inducing element;and a first gate electrode on the first capping layer; and a secondtransistor comprising: a second channel region; a second interface layeron the second channel region; a second gate dielectric layer on thesecond interface layer, a third interface of the second gate dielectriclayer and the second interface layer having a second concentration ofthe dipole-inducing element, the second concentration being differentfrom the first concentration; a second capping layer on the second gatedielectric layer, a fourth interface of the second capping layer and thesecond gate dielectric layer being free from the dipole-inducingelement; and a second gate electrode on the second capping layer.
 8. Thedevice of claim 7 further comprising: a first fin extending from asubstrate, the first fin comprising the first channel region and thesecond channel region.
 9. The device of claim 7 further comprising: afirst fin extending from a substrate, the first fin comprising the firstchannel region; and a second fin extending from the substrate, thesecond fin comprising the second channel region.
 10. The device of claim7, wherein the dipole-inducing element is lanthanum.
 11. The device ofclaim 7, wherein the first capping layer and the second capping layereach comprise TiSiN.
 12. The device of claim 7, wherein the firsttransistor and the second transistor have different threshold voltages.13. A device comprising: a first transistor comprising: a first channelregion; a first interface layer on the first channel region, the firstinterface layer being doped with a dipole-inducing element, a firstconcentration of the dipole-inducing element in the first interfacelayer increasing in a first direction, the first direction extendingaway from the first channel region; a first gate dielectric layer on thefirst interface layer, the first gate dielectric layer being doped withthe dipole-inducing element, a second concentration of thedipole-inducing element in the first gate dielectric layer decreasing inthe first direction; and a first gate electrode on the first gatedielectric layer; and a second transistor comprising: a second channelregion; a second interface layer on the second channel region, thesecond interface layer being free from the dipole-inducing element; asecond gate dielectric layer on the second interface layer, the secondgate dielectric layer being free from the dipole-inducing element; and asecond gate electrode on the second gate dielectric layer.
 14. Thedevice of claim 13 further comprising: a first fin extending from asubstrate, the first fin comprising the first channel region and thesecond channel region.
 15. The device of claim 13 further comprising: afirst fin extending from a substrate, the first fin comprising the firstchannel region; and a second fin extending from the substrate, thesecond fin comprising the second channel region.
 16. The device of claim13, wherein the dipole-inducing element is lanthanum.
 17. The device ofclaim 13, wherein the first transistor further comprises a first cappinglayer between the first gate dielectric layer and the first gateelectrode, the first capping layer being doped with the dipole-inducingelement, and wherein the second transistor further comprises a secondcapping layer between the second gate dielectric layer and the secondgate electrode, the second capping layer being free from thedipole-inducing element.
 18. The device of claim 17, wherein a thirdconcentration of the dipole-inducing element in the first capping layerdecreases in the first direction.
 19. The device of claim 17, whereinthe first capping layer and the second capping layer each compriseTiSiN.
 20. The device of claim 13, wherein the first transistor and thesecond transistor have different threshold voltages.